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IRFB4227PBF
Datasheet
1MB
Specifications
Digi-Key Part Number | IRFB4227PBF-ND |
Manufacturer | Infineon Technologies |
Manufacturer Product Number | IRFB4227PBF |
Description | MOSFET N-CH 200V 65A TO220AB |
Detailed Description | N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB |
Category | Discrete Semiconductor Products |
Transistors – FETs, MOSFETs – Single | |
Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V |
Current – Continuous Drain (Id) @ 25°C | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 24mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
FET Feature | – |
Power Dissipation (Max) | 330W (Tc) |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Base Product Number | IRFB4227 |